Chair Professor, Division Head Su-Huai Wei

Materials and Energy

Office Location
Room B419

B.S. in Physics, Fudan University, China, 1981

M. S. in Physics, College of William and Mary, USA, 1983

Ph. D. in Physics, College of William and Mary, USA, 1985

Professional Employment

    Su-Huai Wei received his B.S. in Physics from Fudan University in China in 1981 and Ph.D. from the College of William and Mary in USA in 1985. He joined the Solar Energy Research Institute (it is now National Renewable Energy Laboratory or NREL) in 1985 as a postdoctoral researcher and later became Staff Scientist, Senior Scientist, Principal Scientist, Manager of the Theoretical Materials Science Group, and was an Institute Research Fellow at NREL before he joins CSRC. He is a Fellow of both the American Physical Society and The Materials Research Society.

Research Interest

1. Optoelectronic properties of photovoltaic and light-emitting materials

2. Defect physics in semiconductors

3. Electronic structures and stabilities of alloys, superlattices, and interfaces

4. Novel properties in nano materials

5. Magnetic properties of semiconductors

6. Electronic properties of organic and hybrid semiconductors

7. Energy storage materials.

8. Electronic structure calculation methods.

  • National 1000 Talent Program Professor, 2015

  • NREL Institute Research Fellow, 2014

  • Fellow of the Materials Research Society, 2014

  • American Physical Society Outstanding Referee Award, 2009

  • Changjiang Chair Professor, Fudan University, 2007

  • Outstanding Performance Award, NREL, 2001

  • Fellow of the American Physical Society, 1999


Representative Publications
1.  “Local-density-functional calculation of the pressure-induced metalization of BaSe and BaTe,” S.-H. Wei and H. Krakauer, Phys. Rev. Lett. 55, 1200 (1985).
2.  “Total energy and band structure calculation for the semimagnetic Cd1-xMnxTe semiconductor alloy and its binary constituents,” S.-H. Wei and A. Zunger, Phys. Rev. B 35, 2340 (1987).
3.  “Role of metal d states in II-VI semiconductors,” S.-H. Wei and A. Zunger, Phys. Rev. B 37, 8958 (1988).
4.  “Electronic properties of random alloys: special quasirandom structures,” S.-H. Wei, L. G. Ferreira, J. E. Bernard, and A. Zunger, Phys. Rev. B 42, 9622 (1990).
5.  “Optical properties of zinc-blende semiconductor alloys: effects of epitaxial strain and chemical ordering,” S.-H. Wei and A. Zunger, Phys. Rev. B 49, 14337 (1994).
6.  “Overcoming the doping bottleneck in semiconductors,” S.-H. Wei, Comp. Mater. Sci. 30, 337 (2004).
7.  “Design of narrow-gap TiO2: A passivated codoping approach for enhanced photoelectrochemical activity,” Y. Gai, J. Li, S.-S. Li, J.-B. Xia and S.-H. Wei, Phys. Rev. Lett. 102, 036402 (2009).
8.  “Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers”, S. Chen, A. Walsh, X. G. Gong, S.-H. Wei, Adv. Mater. 25, 1522 (2013).
9.  “Origin of novel diffusion of Cu and Ag in semiconductors: The case of CdTe”, J. Ma and S.-H. Wei, Phys. Rev. Lett. 110, 085501 (2013).
10.  “Halide perovskite materials for solar cells: A theoretical review”, W.-J. Yin, J.-H. Yang, J. Kang, Y. Yan, and S.-H. Wei, J. Phys. Chem. A 3, 8926 (2015).
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