Chair Professor, Division Head Su-Huai Wei

Materials and Energy

Office Location: Room B419
Telephone: +86-10-56981838
Email: suhuaiwei[at]csrc.ac.cn

Faculty research homepage >

Education

B.S. in Physics, Fudan University, China, 1981

M. S. in Physics, College of William and Mary, USA, 1983

Ph. D. in Physics, College of William and Mary, USA, 1985

Professional Employment

Su-Huai Wei received his B.S. in Physics from Fudan University in China in 1981 and Ph.D. from the College of William and Mary in USA in 1985. He joined the Solar Energy Research Institute (it is now National Renewable Energy Laboratory or NREL) in 1985 as a postdoctoral researcher and later became Staff Scientist, Senior Scientist, Principal Scientist, Manager of the Theoretical Materials Science Group, and was an Institute Research Fellow at NREL before he joins CSRC. He is a Fellow of both the American Physical Society and The Materials Research Society. He has published more than 500 peer-reviewed papers in scientific journals, including more than 70 papers in the prestigious Physical Review Letters with more than 60000 citations (H index ＞ 120 per Google Scholar).

Research Interests

1. Optoelectronic properties of photovoltaic and light-emitting materials

2. Defect physics in semiconductors

3. Electronic structures and stabilities of alloys, superlattices, and interfaces

4. Novel properties in nano materials

5. Magnetic properties of semiconductors

6. Electronic properties of organic and hybrid semiconductors

7. Energy storage materials.

8. Electronic structure calculation methods.

Awards/Honors

NREL Institute Research Fellow, 2014
Fellow of the Materials Research Society, 2014
Changjiang Chair Professor, Fudan University, 2007
Fellow of the American Physical Society, 1999

Representative Publications: 1. S.-H. Wei and H. Krakauer, “Local-density-functional calculation of the pressure-induced metalization of BaSe and BaTe”, Phys. Rev. Lett. 55, 1200 (1985).; 2. S.-H. Wei and A. Zunger, “Role of metal d states in II-VI semiconductors”, Phys. Rev. B 37, 8958 (1988).; 3. S.-H. Wei, L. G. Ferreira, J. E. Bernard, and A. Zunger, “Electronic properties of random alloys: special quasirandom structures”, Phys. Rev. B 42, 9622 (1990).; 4. S.-H. Wei and A. Zunger, “Optical properties of zinc-blende semiconductor alloys: effects of epitaxial strain and chemical ordering”, Phys. Rev. B 49, 14337 (1994).; 5. S.-H. Wei, “Overcoming the doping bottleneck in semiconductors”, Comp. Mater. Sci. 30, 337 (2004).; 6. Y. Gai, J. Li, S.-S. Li, J.-B. Xia and S.-H. Wei, “Design of narrow-gap TiO2: A passivated codoping approach for enhanced photoelectrochemical activity”, Phys. Rev. Lett. 102, 036402 (2009).; 7. W.-J. Yin, J.-H. Yang, J. Kang, Y. Yan, and S.-H. Wei, “Halide perovskite materials for solar cells: A theoretical review”, J. Phys. Chem. A 3, 8926 (2015).; 8. H.-X. Deng, J.-W. Luo, S.-S. Li, and S.-H. Wei, “Origin of the distinct diffusion behaviors of Cu and Ag in covalent and ionic semiconductors”, Phys. Rev. Lett. 117, 165901 (2016).; 9. J. Yang and S.-H. Wei, “First-principles study of the band gap tuning and doping control in CdSexTe1-x alloy for high efficiency solar cell”, Chin. Phys. B 28, 086106 (2019).; 10. X.-J. Zhao, Y. Yang, D.-B. Zhang, and S.-H. Wei, “Formation of Bloch flat bands in polar twisted bilayers without magic angles”, Phys. Rev. Lett. 124, 086401 (2020).