Diamond as an Extreme Semiconductor for Optoelectronics and MEMS
Dr. Mei-Yong Liao
National Institute for Materials Science (NIMS), Japan

The extreme electronical, mechanical, and thermal properties of diamond such as the wide bandgap of 5.5 eV, the highest Young’s modulus and the highest thermal conductivity offer it the promising semiconductor for optoelectronics, micro/nanomechanical system (MEMS/NEMS), and power electronics. During the past decade, we have been focused on the research of diamond deep-UV sensor, diamond MEMS/NEMS devices and metal-oxide-semiconductor field-effect transistors (MOSFETs) by proposing the unique device concepts and devices physics mechanisms. In this talk, the DUV sensor and the sensing mechanism based on single crystal diamond will be presented. Then, a diamond-on-diamond unique device concept was proposed for the development of diamond MEMS/NEMS resonators and NEMS switch. Finally, the diamond MOSFETs based on the surface conductivity will be reported.

About the Speaker

Dr. Meiyong Liao obtained the PhD degree in Institute of Semiconductors, Chinese Academy of Science 2002. After that he was employed as a visiting associated professor in Kyoto University from 2002-2004. From 2004-2008, he was a postdoc researcher in National Institute for Materials Science (NIMS), Japan. In 2008, he obtained the permanent senior researcher position in NIMS. Now, he is the Principle Researcher in NIMS. His current research topics are on diamond electronics and MEMS/NEMS devices for power switch and sensing applications.


2016-05-20 10:30 AM
Room: A403 Meeting Room
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