Point defects in semiconductors have become a central platform for realizing physical qubits used in quantum metrology and quantum networks. Recent discoveries of emerging quantum defects in silicon, such as the T center and G center, have laid the groundwork for exploring novel spin–photon interfaces, offering promising routes toward seamless integration with existing silicon-based technologies. In this talk, I will present an overview of the key challenges in designing high-performance quantum defects in silicon. Our analysis is based on a comprehensive database of approximately 22,000 defects computed using high-throughput first-principles methods. I will introduce several newly screened defect candidates, including recently discovered T center–like defects. Finally, I will discuss how data-driven approaches can accelerate the discovery of quantum defects and outline design guidelines – rooted in electronic structure insights – for identifying the next generation of high-performance spin-photon interfaces.

熊熠煌, 2011年起先后在美国宾夕法尼亚州立大学(PSU-University Park)攻读材料科学与工程学士及博士学位。2021年起在美国达特茅斯学院(Dartmouth College)任博士后研究员, 2024年入选海外高层次青年人才, 2025年获聘南京大学电子科学与工程学院副教授、博士生导师。研究方向为基于第一性原理计算的高通量材料设计, 如自旋光子界面设计、机器学习势开发和量子器件仿真等。